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Phase Change Materials for RF Microsystems

Vanadium Dioxide (VO2) is a phase-change material (PCM) that exhibits a solid-to-solid crystalline structure transition at 68 °C. The electrical conductivity of VO2 is that of a dielectric (or insulator) below the transition temperature and a conductor above it. This is caused by the transition between monoclinic dielectric phase and tetragonal rutile metallic phase. VO2 is particularly conducive to development of non-linear devices because of its relatively low transition temperature, as compared to other PCMs, e.g. germanium telluride (GeTe).

We have previously used VO2 in frequency-selective surface (also known as FSS or metamaterial) THz filters, at operating frequency band of 500 GHz. Currently, we are developing thin films of VO2 for use in micro-bolometer imagers/sensors as well as use in millimeter wave (30-300 GHz) phase shifters and switches.

Figure 1: VO2 thin film fabricated and measured at the Ohio State University.

Thin film deposition technique is being researched in our group using reactive DC magnetron sputtering and atomic layer deposition (ALD) to fabricate films on various substrates and films. One example of the unique feature of our fabricated films is shown in Figure 1. Here, one can observe a high resistivity contrast between the temperatures above and below the transition point. Our films exhibit low hysteresis and very large (non-linear) change in conductivity on the order of 6E+4 Ω.cm.


Related papers:

1) V. Sanphuang, N. Ghalichechian, N. Nahar, J. Volakis, “Equivalent Circuit for VO2 Phase Change Material Film in Reconfigurable Frequency Selective Surfaces,” Applied Physics Letters, vol. 107, p.253106, 2015. (Download PDF)

2) V. Sanphuang; N. Ghalichechian; N. K. Nahar; J. L. Volakis, "Reconfigurable THz Filters Using Phase-Change Material and Integrated Heater," IEEE Transactions on Terahertz Science and Technology, 2016. (Download PDF)